Bis(methyl-η5-cyclopentadienyl)methoxymethylhafnium 双(甲基-η5-环戊二烯)甲氧甲基铪
CAS N/A MFCD16875686
化学结构图
SMILES:
化学属性
| Density | 1.63 g/mL±0.01 g/mL at 25 °C(lit.) |
|---|---|
| Mol. Formula | HfCH3(OCH3)[C5H4(CH3)]2 |
| Boiling Point | 105 °C/0.3-0.4 mmHg(lit.) |
别名和识别编码
| Synonym | 双(甲基-η5-环戊二烯)甲氧甲基铪 HfD-CO4 |
|---|---|
| MDL Number | MFCD16875686 |
| Chemical Name | Bis(methyl-η5-cyclopentadienyl)methoxymethylhafnium |
| Chemical Name Translation | 双(甲基-η5-环戊二烯)甲氧甲基铪 |
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分类
- {SNA} 72: Hafnium, CVD and ALD Precursors Packaged for Deposition Systems, CVD and ALD Precursors by Metal, Hafnium, Materials Science, Micro/NanoElectronics, Vapor Deposition Precursors
- {SNA} 72: Hafnium, CVD and ALD Precursors Packaged for Deposition Systems, CVD and ALD Precursors by Metal, Hafnium, Micro/NanoElectronics, Vapor Deposition Precursors, 材料科学
相关文献及参考
- 1. Wilk, G.D.; Wallace, R.M.; Anthony, J.M. , High-k gate dielectrics: current status and material properties considerations J. Appl. Phys. 89 , 5243, (2001)
- 2. Gutsche, M.; Seidl, H.; Luetzen J.; Birner, A.; et. al IEDM , 18.6.1, (2001)
- P. R. Chalker et al. Appl. Phys. Lett. 93 , 182911, (2008)
- J. Niinisto et al ., Atomic Layer Deposition of HfO 2 Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures Chem. Mater. , (2007)
安全信息
GHS Symbol
- P261 Avoid breathing dust/fume/gas/mist/vapours/spray. 避免吸入粉尘/烟/气体/烟雾/蒸汽/喷雾。
- P305+P351+P338
- H315 Causes skin irritation 会刺激皮肤
- H319 Causes serious eye irritation 严重刺激眼睛
- H335 May cause respiratory irritation 可能导致呼吸道刺激
- S26 In case of contact with eyes, rinse immediately with plenty of water and seek medical advice 眼睛接触后，立即用大量水冲洗并征求医生意见；
- S36/37/39 Wear suitable protective clothing, gloves and eye/face protection 穿戴适当的防护服、手套和眼睛/面保护；
- R36/37/38 Irritating to eyes, respiratory system and skin 对眼睛、呼吸系统和皮肤有刺激性
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